EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L.

文件：394.75 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications

文件：90.16 Kbytes 页数：6 Pages

CDIL

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

文件：207.94 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

文件：152.64 Kbytes 页数：10 Pages

ONSEMI

安森美半导体