MJD253

Complementary Silicon Plastic Power Transistor

ComplementarySiliconPlasticPowerTransistor DPAK−3forSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min)@IC =10mAdc •HighDCCur

MJD253

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowCollector−EmitterSaturationVoltage,HighCurrent−Gain. Applications Lowpoweraudioamplifier,Lowcurrent,highspeedswitchingapplications.

MJD253

isc Silicon PNP Power Transistor

DESCRIPTION •HighDCCurrentGain- :hFE=40(Min)@IC=-0.2A •LowCollectorSaturationVoltage- :VCE(sat)=-0.3V(Max.)@IC=-0.5A •ComplementtotheNPNMJD243 •MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS •Designedfo

MJD253

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD253

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

MJD253

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

MJD253

Complementary Silicon Plastic Power Transistor

MJD253

Complementary Silicon Plastic Power Transistors

MJD253

Complementary Silicon Plastic Power Transistors

MJD253

Complementary Silicon Plastic Power Transistors