Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

文件：124.95 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

. . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC =

文件：209.75 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件：98.46 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

. . . designed for low voltage, low–power, high–gain audio amplifier applications.\n\n• Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc\n• High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc    \n                                                   = 15 (Min) @ IC = 1

恩XP

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：剪切带（CT） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PWR NPN 4A 100V DPAK

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

文件：124.95 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件：98.46 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor

文件：149.11 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件：112.97 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

三极管

ONSEMI

安森美半导体