MJD200

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD200

Complementary Plastic Power Transistors

ComplementaryPlasticPowerTransistors NPN/PNPSiliconDPAKForSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage−VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain−hFE

MJD200

D-PAK for Surface Mount Applications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix)

MJD200

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=25V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

MJD200

5 A, 25 V NPN Bipolar Power Transistor; • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)\n• Lead Formed Version in 16 mm Tape and Reel (\"T4\" Suffix)\n• Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ I C = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 Adc\n• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc\n• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB\n• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Devices are Pb-Free and are RoHS Compliant\n;

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

MJD200

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS;

恩XP

MJD200

Complementary Plastic Power Transistors

MJD200

Complementary Plastic Power Transistors

MJD200

Complementary Plastic Power Transistors

MJD200

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：托盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 25V 5A DPAK