| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJD200 | D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) 文件:45.78 Kbytes 页数:5 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
MJD200 | Complementary Plastic Power Transistors Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc • High DC Current Gain − hFE 文件:236.97 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MJD200 | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc 文件:236.97 Kbytes 页数:6 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | |
MJD200 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 25V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications 文件:302.22 Kbytes 页数:3 Pages | ISC 无锡固电 | ISC | |
MJD200 | Complementary Plastic Power Transistors 文件:87.9 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MJD200 | Complementary Plastic Power Transistors 文件:138.05 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MJD200 | Complementary Plastic Power Transistors 文件:152.01 Kbytes 页数:7 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MJD200 | 5 A, 25 V NPN Bipolar Power Transistor The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices. • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sle; | ONSEMI 安森美半导体 | ONSEMI | |
MJD200 | SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS | 恩XP | 恩XP | |
MJD200 | Package:TO-252-3,DPak(2 引线 + 接片),SC-63;包装:托盘 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 25V 5A DPAK | ONSEMI 安森美半导体 | ONSEMI |
产品属性
- 产品编号:
MJD200
- 制造商:
onsemi
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
托盘
- 晶体管类型:
NPN
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
1.8V @ 1A,5A
- 电流 - 集电极截止(最大值):
100nA(ICBO)
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
45 @ 2A,1V
- 频率 - 跃迁:
65MHz
- 工作温度:
-65°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-252-3,DPak(2 引线 + 接片),SC-63
- 供应商器件封装:
DPAK
- 描述:
TRANS NPN 25V 5A DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ONFAI |
24+ |
6000 |
询价 | ||||
FAIRCHILD |
24+ |
原装进口原厂原包接受订货 |
3148 |
原装现货假一罚十 |
询价 | ||
Central |
24+ |
TO-252 |
5000 |
只做原装公司现货 |
询价 | ||
ON |
22+ |
SOT252 |
13475 |
进口原装 |
询价 | ||
ON |
25+ |
SOT252 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
MOT |
25+23+ |
TO252 |
49569 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
24+ |
SOP |
240 |
现货供应 |
询价 | |||
ONFAI |
23+ |
TO-252 |
24190 |
原装正品代理渠道价格优势 |
询价 |
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