MJD243-1

NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS

...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=40(Min)@IC=200mAdc =15(Min)@IC=

243-1PAB

BOARDLEVELPOWERSEMICONDUCTORHEATSINKS

•Nointerfacematerialisneeded •Copperwithmattetinplatingforimprovedsolderabilityandassembly •BoththecomponentandtheheatsinkareinstalledonthePC-boardutilizing standardSMTassemblyequipmentfor”Tape&Reel”and“Tube”formats •EIAstandardsandESDprotectionares

243-1PAB

BOARDLEVELPOWERSEMICONDUCTORHEATSINKS