M5M5技术资料参数供应商报价三菱电机第13页-114ic电子网

首页 >M5M5>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51008VP-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008VP-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008VP-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008VP-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BRT-10VL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BRT-10VLL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-10L-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-10LL-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-10VL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-10VLL-I	文件：85.25 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：85.25 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
上海市鑫鸿达电子	M5M5256DFP-70GI	RENESAS/瑞萨	2022+		150	全新原装货期两周	询价
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市中亿伟业电子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原装假一赔十	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
深圳市科雨电子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您体验愉快问购元件!	询价
深圳市河锋鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞萨	2022+	TSOP32	99	原厂代理终端免费提供样品	询价
深圳市英科美电子有限公司	M5M5V108DKV-70H	RENESAS/瑞萨	2223+	TSSOP32	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市美思瑞电子科技有限公司	M5M5V216ATP-55HIDT	RENESAS/瑞萨	22+	TSOP	12245	现货,原厂原装假一罚十!	询价
深圳市振宏微科技有限公司	M5M51008CFP-70H	MITSUBISH	23+	BGAQFP	8659	原装公司现货!原装正品价格优势.	询价

更多M5M5供应商更新时间2026-1-30 9:50:00

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