M5M5技术资料参数供应商报价三菱电机第14页-114ic电子网

首页 >M5M5>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51016BTP-12VL	文件：75.91 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：75.91 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-12VL-I	文件：75.95 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：75.95 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-12VLL	文件：75.91 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：75.91 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-12VLL-I	文件：75.95 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：75.95 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-70L	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-70L-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016BTP-70LL-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016RT-10L-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016RT-10LL-I	文件：79.48 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：79.48 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51016RT-12VL	文件：75.91 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are 文件：75.91 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

<<<9 10 11 12 131415 16 17 18 19 >>>

技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
深圳市粤科源兴科技有限公司	M5M5256DVP-70GI	RENESAS	13+		2038	原装分销	询价
深圳市羿芯诚电子有限公司	M5M5408FP-70LL	MITSUBISHI/三菱电机	24+	SOP	3000	全新原装现货优势库存	询价
深圳市旺财半导体有限公司	M5M5188BP-15	MITSUBISHI	23+	DIP-22	3880	正品原装货价格低	询价
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市科雨电子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	M5M5W816WG-55HI其他被动元件	RENESAS/瑞萨	23+	BGA	2680		询价
深圳市明嘉莱科技有限公司	M5M5256DFP-70GI#SM	RENESAS/瑞萨	25+	SOP28	860000	明嘉莱只做原装正品现货	询价
上海磐岳电子有限公司	M5M5W816WG-70HI	HIT	2023+	FBGA	5800	进口原装,现货热卖	询价

更多M5M5供应商更新时间2026-1-30 13:30:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号