M5M5技术资料参数供应商报价三菱电机第16页-114ic电子网

首页 >M5M5>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51R16AWG-10H	文件：84.07 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：84.07 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-10HI	文件：89.2 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：89.2 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-10L	文件：84.07 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：84.07 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-10LI	文件：89.2 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：89.2 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-12H	文件：84.07 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：84.07 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-12HI	文件：89.2 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：89.2 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-12L	文件：84.07 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：84.07 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-12LI	文件：89.2 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：89.2 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-15H	文件：84.07 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：84.07 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-15HI	文件：89.2 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：89.2 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
上海市鑫鸿达电子	M5M5256DFP-70GI	RENESAS/瑞萨	2022+		150	全新原装货期两周	询价
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市佳鑫美电子科技有限公司	M5M5V408BTP70H	MITSUMI	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市欧亚佳电子有限公司	M5M5165P-15	MITSUBISHI	20+	DIP28	11520	特价全新原装公司现货	询价
深圳市中亿伟业电子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原装假一赔十	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
深圳市科雨电子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您体验愉快问购元件!	询价
深圳市河锋鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞萨	2022+	TSOP32	99	原厂代理终端免费提供样品	询价
深圳市正迈科技有限公司	M5M51008DKV-70HF#BT	RENESAS	23+	NA	19854	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价

更多M5M5供应商更新时间2026-1-30 9:50:00

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