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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
M5M5	文件：179.31 Kbytes Page：2 Pages	MEDIUM CURRENT SILICON RECTIFIERS [EDAL]	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
M5M5	文件：1.46454 Mbytes Page：2 Pages	SILICON GENERAL PURPOSE 5.0 AMP DIODES [EDAL]	EDAL Edal Industries, Inc.	EDAL
M5M51008BFP	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-10VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-10VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-12VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-12VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-15VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-15VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-70VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BFP-70VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-10VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-10VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-12VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-12VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-15VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-15VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-70VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKR-70VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi
M5M51008BKV-10VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机	Mitsubishi

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型号：
M5M5
功能描述：
MEDIUM CURRENT SILICON RECTIFIERS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	M5M5	EDAL	23+	NA	39960	只做进口原装,终端工厂免费送样	询价
深圳市中亿伟业电子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原装假一赔十	询价
上海市鑫鸿达电子	M5M5256DFP-70GI	RENESAS/瑞萨	2022+		150	全新原装货期两周	询价
深圳市鹏锦翔科技有限公司一部	M5M5256DFP-70LL	RENESAS/瑞萨	21+	SOP28	15000	全新原装现货假一赔十	询价
深圳市美思瑞电子科技有限公司	M5M5V216ATP-55HIDT	RENESAS/瑞萨	22+	TSOP	12245	现货,原厂原装假一罚十!	询价
深圳市远进半导体有限公司	M5M51008DFP-70HI	RENESAS/瑞萨	22	SOP32	15000	3月31原装,微信报价	询价
深圳市凌特半导体科技有限公司	M5M5V108DKV-70HI	RENESAS/瑞萨		TSSOP32	12000	原装现货,长期供应,终端账期支持	询价
深圳市华集芯实业有限公司	M5M5256BFP-10L	MIT	23+	SSOP	6000	公司十几年如一日,只做原装正品,优势渠道保证每一片	询价
深圳兆威电子有限公司	M5M5256DFP-70XL	MIT	22+	SOP28	30792	原装正品现货	询价
深圳市河锋鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞萨	2022+	TSOP32	99	原厂代理终端免费提供样品	询价

更多M5M5供应商更新时间2024-4-23 14:51:00

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