| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI | ||
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages | MITSUBISHI 三菱电机 | MITSUBISHI |
技术参数
- Organization (Kword)：
512
- Organization(bit)：
x 36
- Package Type：
TQFP(100)
- I/O voltage (VDDQ)：
3.3/2.5
- Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
- Operating temperature (°C)：
0 to 70
- Production Status：
EOL
- Clock frequency (Hz)：
167
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIT |
25+ |
DIP28 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
RENESAS |
13+ |
2038 |
原装分销 |
询价 | |||
MITSUBISHI/三菱电机 |
24+ |
SOP |
3000 |
全新原装现货 优势库存 |
询价 | ||
MITSUBISHI |
2025+ |
SOP-32 |
3550 |
全新原厂原装产品、公司现货销售 |
询价 | ||
RENESAS/瑞萨 |
23+ |
BGA |
2680 |
询价 | |||
MIT |
25+ |
SOP28 |
9 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
RENESAS/瑞萨 |
25+ |
SOP28 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
MIT |
24+/25+ |
8 |
原装正品现货库存价优 |
询价 | |||
MITSUBIS |
QQ咨询 |
DIP |
834 |
全新原装 研究所指定供货商 |
询价 | ||
RENESAS/瑞萨 |
2023+ |
TSOP32 |
11000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 |
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