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M5M51008CKV-55X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKV-70H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKV-70X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CP

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CP-55H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CP-55X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CP-70H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CP-70X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CRV

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CRV-55H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

技术参数

  • Organization (Kword):

    512

  • Organization(bit):

    x 36

  • Package Type:

    TQFP(100)

  • I/O voltage (VDDQ):

    3.3/2.5

  • Supply voltage (V):

    2.375 to 2.625/3.135 to 3.465

  • Operating temperature (°C):

    0 to 70

  • Production Status:

    EOL

  • Clock frequency (Hz):

    167

供应商型号品牌批号封装库存备注价格
MIT
25+
DIP28
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MIT
24+
(SOP)
2650
原装现货假一罚十
询价
RENESAS
24+
TSOP
5000
全现原装公司现货
询价
MITSUBISHI
2025+
SOP-32
3550
全新原厂原装产品、公司现货销售
询价
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
询价
MITSUBISHI
23+
DIP-22
3880
正品原装货价格低
询价
MITSUBIS
QQ咨询
DIP
834
全新原装 研究所指定供货商
询价
MIT
23+
SOP
3000
原装正品假一罚百!可开增票!
询价
RENESAS/瑞萨
20+
QFP-100
580
进口原装现货,假一赔十
询价
2023+
3000
进口原装现货
询价
更多M5M5供应商 更新时间2026-1-30 10:54:00