M5M5技术资料参数供应商报价三菱电机第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51008BKV-10VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BKV-12VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BKV-12VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BKV-15VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BKV-15VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BKV-70VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BKV-70VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BRV-10VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BRV-10VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008BRV-12VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科雨电子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您体验愉快问购元件!	询价
深圳市羿芯诚电子有限公司	M5M5408FP-70LL	MITSUBISHI/三菱电机	24+	SOP	3000	全新原装现货优势库存	询价
深圳市拓亿芯电子有限公司	M5M5256DVP-70LLISESE01	RENESAS/瑞萨	25+	SSOP28	11500	原装现货,价格优势	询价
深圳市欧立现代科技有限公司	M5M5V416BUG-70HI	MIT	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市中远芯科技有限公司	M5M5255DFP-70LL	MITSUBISHI/三菱	99+00+	SOP28	143	原装现货	询价
深圳市明嘉莱科技有限公司	M5M5256DFP-70GI#SM	RENESAS/瑞萨	25+	SOP28	860000	明嘉莱只做原装正品现货	询价
上海鑫科润电子科技有限公司	M5M51008BFP-55L	MITSUBIS	07+	SOP32	30	原装现货海量库存欢迎咨询	询价
深圳市凌旭科技有限公司	M5M5V408BTP-70HI	RENESAS	2016+	TSOP32	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市博中泰实业有限公司	M5M5V408BKV-85HIT00R	MITSUBISHI/三菱	24+	SOP-32	60000		询价
贸泽芯城（深圳）电子科技有限公司	M5M5W817TP-70H	MIT	23+	TSOP	8000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

更多M5M5供应商更新时间2026-1-30 14:02:00

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