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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51008CRV-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008CRV-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008CRV-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008CVP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008CVP-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008CVP-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008CVP-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008CVP-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008DFP	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：70.54 Kbytes 页数：8 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008DFP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：120.04 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤科源兴科技有限公司	M5M5256DVP-70GI	RENESAS	13+		2038	原装分销	询价
深圳市正纳电子有限公司	M5M5V108DKV-70HI	NA	23+	NA	26094	10年以上分销经验原装进口正品,做服务型企业	询价
深圳市欧立现代科技有限公司	M5M5V416BUG-70HI	MIT	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市威尔健半导体有限公司	M5M5W816WG-55HI其他被动元件	RENESAS/瑞萨	23+	BGA	2680		询价
深圳市能创芯电子科技有限公司	M5M5256DFP-70LL	MIT	23+	SOP	3000	原装正品假一罚百!可开增票!	询价
深圳市羿芯诚电子有限公司	M5M5408FP-70LL	MITSUBISHI/三菱电机	24+	SOP	3000	全新原装现货优势库存	询价
深圳庞田科技有限公司	M5M5V108DKV-70H其他被动元件	RENESAS/瑞萨	2023+	TSOP32	11000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
上海凌岳电子科技有限公司（上海涵恩科技）	M5M5V408BTP		2023+		3000	进口原装现货	询价
上海鑫科润电子科技有限公司	M5M51008BFP-55L	MITSUBIS	07+	SOP32	30	原装现货海量库存欢迎咨询	询价
深圳市晨豪科技有限公司	M5M5W816WG-55HI/R1LV0816A	RENESAS/瑞萨	23+	BGA-48	89630	当天发货全新原装现货	询价

更多M5M5供应商更新时间2026-1-30 9:01:00

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