M5M5技术资料参数供应商报价三菱电机第10页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51008DKV-55H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：70.54 Kbytes 页数：8 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008DKV-55H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：120.04 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
M5M51008DKV-70H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：70.54 Kbytes 页数：8 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008DKV-70H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：120.04 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
M5M51008DRV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：120.04 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
M5M51008DRV-55H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：70.54 Kbytes 页数：8 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008DRV-55H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：120.04 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
M5M51008DRV-70H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：120.04 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
M5M51008DRV-70H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：70.54 Kbytes 页数：8 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008DVP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi 文件：120.04 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市欧立现代科技有限公司	M5M5V416BUG-70HI	MIT	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
深圳市联世界科技有限公司	M5M5256BFP-10L	MIT	24+/25+		8	原装正品现货库存价优	询价
深圳市宏世佳电子科技有限公司	M5M51008AFP-10LL	MITSUBISHI	2025+	SOP-32	3550	全新原厂原装产品、公司现货销售	询价
上海鑫科润电子科技有限公司	M5M51008BFP-55L	MITSUBIS	07+	SOP32	30	原装现货海量库存欢迎咨询	询价
深圳市旺财半导体有限公司	M5M5188BP-15	MITSUBISHI	23+	DIP-22	3880	正品原装货价格低	询价
深圳市赛特兴科技有限公司	M5M51008BP-70LI	MITSUBIS	QQ咨询	DIP	834	全新原装研究所指定供货商	询价
深圳市达恩科技有限公司	M5M5165P-10L	MIT	24+	DIP	2364	进口原装正品优势供应	询价

更多M5M5供应商更新时间2026-1-30 13:30:00

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