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M5M51008CFP-70H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CFP-70X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKR-55

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKR-55H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKR-55X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKR-70

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKR-70H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKR-70X

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKV

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M51008CKV-55H

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件:87.62 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

技术参数

  • Organization (Kword):

    512

  • Organization(bit):

    x 36

  • Package Type:

    TQFP(100)

  • I/O voltage (VDDQ):

    3.3/2.5

  • Supply voltage (V):

    2.375 to 2.625/3.135 to 3.465

  • Operating temperature (°C):

    0 to 70

  • Production Status:

    EOL

  • Clock frequency (Hz):

    167

供应商型号品牌批号封装库存备注价格
MIT
24+
(SOP)
2650
原装现货假一罚十
询价
MIT
25+
DIP28
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
RENESAS
24+
TSOP
5000
全现原装公司现货
询价
MITSUBISHI
2025+
SOP-32
3550
全新原厂原装产品、公司现货销售
询价
MITSUBISHI
23+
DIP-22
3880
正品原装货价格低
询价
MIT
TSSOP3
06+
39
全新原装进口自己库存优势
询价
MITSUBIS
QQ咨询
DIP
834
全新原装 研究所指定供货商
询价
MIT
25+
SOP28
9
就找我吧!--邀您体验愉快问购元件!
询价
MIT
24+/25+
8
原装正品现货库存价优
询价
MITSUBISHI
23+
TSOP-28
65600
询价
更多M5M5供应商 更新时间2026-1-29 13:30:00