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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51008BFP-70VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-10VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-10VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-12VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-12VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-15VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-15VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-70VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKR-70VLL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi
M5M51008BKV-10VL	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. T 文件：68.53 Kbytes 页数：7 Pages	Mitsubishi 三菱电机	Mitsubishi

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市益百分电子有限公司	M5M51008DVP-70H	MIT	TSSOP3	06+	39	全新原装进口自己库存优势	询价
深圳市欧立现代科技有限公司	M5M5V416BUG-70HI	MIT	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
深圳市粤科源兴科技有限公司	M5M5256DVP-70GI	RENESAS	13+		2038	原装分销	询价
深圳市宏世佳电子科技有限公司	M5M51008AFP-10LL	MITSUBISHI	2025+	SOP-32	3550	全新原厂原装产品、公司现货销售	询价
深圳市赛尔通科技有限公司	M5M5256DVP-55LL	MITSUBISHI	23+	TSOP-28	65600		询价
深圳市羿芯诚电子有限公司	M5M5408FP-70LL	MITSUBISHI/三菱电机	24+	SOP	3000	全新原装现货优势库存	询价
深圳市旺财半导体有限公司	M5M5188BP-15	MITSUBISHI	23+	DIP-22	3880	正品原装货价格低	询价

更多M5M5供应商更新时间2025-12-14 8:01:00

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