M5M51008BKR-70VLL中文资料三菱电机数据手册PDF规格书

DESCRIPTION

The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are

fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application.

FEATURES

Package

Low stand-by current 0.3µA (typ.)

Directly TTL compatible : All inputs and outputs

Easy memory expansion and power down by S1,S2

Data hold on +2V power supply

Three-state outputs : OR - tie capability

OE prevents data contention in the I/O bus

Common data I/O

M5M51008BFP ············ 32pin 525mil SOP

M5M51008BVP,RV············ 32pin 8 X 20 mm2 TSOP

M5M51008BKV,KR ············ 32pin 8 X 13.4 mm2 TSOP

APPLICATION

Small capacity memory units