1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：75.95 Kbytes 页数：7 Pages

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三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：75.91 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：75.95 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：79.48 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：79.48 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

16384-B1T (2048-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5118P series of 2048-word by 8-bit asynchronous silicon gate CMOS static RAM operates on a single 5V power supply and is designed for easy use in applications requiring battery back - up_ Two chip select inputs, Sl and S2, are available to provide the minimum standby curren

文件：307.87 Kbytes 页数：5 Pages

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三菱电机

16384-B1T (2048-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5118P series of 2048-word by 8-bit asynchronous silicon gate CMOS static RAM operates on a single 5V power supply and is designed for easy use in applications requiring battery back - up_ Two chip select inputs, Sl and S2, are available to provide the minimum standby curren

文件：307.87 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M512R88DJ is a family of 131072-word by 8-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application. These devices operate on a single 3.3V supply, and are directly TTL compatible. They include a power down feature a

文件：62.77 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机

1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M512R88DJ is a family of 131072-word by 8-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application. These devices operate on a single 3.3V supply, and are directly TTL compatible. They include a power down feature a

文件：62.77 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机

1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M512R88DJ is a family of 131072-word by 8-bit static RAMs, fabricated with the high performance CMOS silicon gate process and designed for high speed application. These devices operate on a single 3.3V supply, and are directly TTL compatible. They include a power down feature a

文件：62.77 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机