M5M5技术资料参数供应商报价三菱电机第17页-114ic电子网

首页 >M5M5>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51R16AWG-15L	文件：84.07 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：84.07 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51R16AWG-15LI	文件：89.2 Kbytes Page：7 Pages	1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current 文件：89.2 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255DP-45LL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255DP-45XL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255DP-55LL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255DP-55XL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255DP-70LL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255DP-70XL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255FP-45LL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255FP-45XL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
上海市鑫鸿达电子	M5M5256DFP-70GI	RENESAS/瑞萨	2022+		150	全新原装货期两周	询价
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞萨	2022+	TSOP32	99	原厂代理终端免费提供样品	询价
深圳市科雨电子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您体验愉快问购元件!	询价
上海磐岳电子有限公司	M5M5W816WG-70HI	HIT	2023+	FBGA	5800	进口原装,现货热卖	询价
深圳市美思瑞电子科技有限公司	M5M5V216ATP-55HIDT	RENESAS/瑞萨	22+	TSOP	12245	现货,原厂原装假一罚十!	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
深圳市沃泰克斯电子技术有限公司	M5M5256DFP-70XL	RENESAS	0513G	SOP	58	只做原装,现货库存	询价
深圳市佳鑫美电子科技有限公司	M5M5V408BTP70H	MITSUMI	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价

更多M5M5供应商更新时间2026-1-30 14:08:00

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