M5M5技术资料参数供应商报价三菱电机第12页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M51008KR-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008KR-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008KV-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008KV-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008KV-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008KV-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008RV-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008RV-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008RV-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M51008RV-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de 文件：87.62 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	M5M5W816WG-70HI	HIT	2023+	FBGA	5800	进口原装,现货热卖	询价
千层芯半导体(深圳)有限公司	M5M5W816TP-70HI	MINI	24+	SMD其他电子元	17	一级代理全新原装现货	询价
深圳市创新迹电子有限公司	M5M5V208AKV-70HIT00T	RENESAS	22+	TSOP32	20000	公司只做原装品质保障	询价
深圳市胜彬电子有限公司	M5M5W816TP-55HI	MIT	22+	TSSOP	3000	原装正品,支持实单	询价
深圳市沃泰克斯电子技术有限公司	M5M5256DFP-70XL	RENESAS	0513G	SOP	58	只做原装,现货库存	询价
深圳市粤科源兴科技有限公司	M5M5256DVP-70GI	RENESAS	13+		2038	原装分销	询价
深圳市安富世纪电子有限公司	M5M5V416BTP-70HI	RNENSAS	23+	TSOP	429	全新原装正品现货,支持订货	询价
深圳市威尔健半导体有限公司	M5M5W816WG-55HI其他被动元件	RENESAS/瑞萨	23+	BGA	2680		询价
深圳瞄钧科技有限公司	M5M5V416CWG-70HI	MIT	24+	TSOP	48000	特价特价100原装长期供货.	询价
深圳庞田科技有限公司	M5M5V108DKV-70H其他被动元件	RENESAS/瑞萨	2023+	TSOP32	11000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价

更多M5M5供应商更新时间2026-1-30 12:10:00

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