M5M5技术资料参数供应商报价三菱电机第19页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M5256-15	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-15L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-15LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-70	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-70L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-70LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-85	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-85L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-85LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256BFP	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市卓越微芯电子有限公司	M5M5165P-12	MIT	25+	DIP28	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
上海市鑫鸿达电子	M5M5256DFP-70GI	RENESAS/瑞萨	2022+		150	全新原装货期两周	询价
深圳市河锋鑫科技有限公司	M5M5V108DVP-70H	RENESAS/瑞萨	2022+	TSOP32	99	原厂代理终端免费提供样品	询价
深圳市科雨电子有限公司	M5M5256DFP-70XL	MIT	25+	SOP28	9	就找我吧!--邀您体验愉快问购元件!	询价
上海磐岳电子有限公司	M5M5W816WG-70HI	HIT	2023+	FBGA	5800	进口原装,现货热卖	询价
深圳市美思瑞电子科技有限公司	M5M5V216ATP-55HIDT	RENESAS/瑞萨	22+	TSOP	12245	现货,原厂原装假一罚十!	询价
深圳市中亿伟业电子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原装假一赔十	询价
深圳市沃泰克斯电子技术有限公司	M5M5256DFP-70XL	RENESAS	0513G	SOP	58	只做原装,现货库存	询价
深圳市明嘉莱科技有限公司	M5M5V108DKV-70HI	RENESAS/瑞萨	24+	TSOP	880000	明嘉莱只做原装正品现货	询价
深圳市英科美电子有限公司	M5M5V108DKV-70H	RENESAS/瑞萨	2223+	TSSOP32	26800	只做原装正品假一赔十为客户做到零风险	询价

更多M5M5供应商更新时间2026-1-30 14:08:00

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