M5M5技术资料参数供应商报价三菱电机第18页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M5M5255FP-55LL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255FP-55XL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255FP-70LL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5255FP-70XL	文件：64.129 Kbytes Page：7 Pages	262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i 文件：64.129 Kbytes 页数：7 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-10	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-10L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-10LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-12	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-12L	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI
M5M5256-12LL	文件：311.53 Kbytes Page：5 Pages	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION This MBMB5256BP, FP, KP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high-density and low-power static RAM. It 文件：311.53 Kbytes 页数：5 Pages	MITSUBISHI 三菱电机	MITSUBISHI

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技术参数

Organization (Kword)：
512
Organization(bit)：
x 36
Package Type：
TQFP(100)
I/O voltage (VDDQ)：
3.3/2.5
Supply voltage (V)：
2.375 to 2.625/3.135 to 3.465
Operating temperature (°C)：
0 to 70
Production Status：
EOL
Clock frequency (Hz)：
167

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市中亿伟业电子有限公司	M5M5J167KT70HI	MITSUBISHI	2018+	SOP/DIPQFP	140	原装假一赔十	询价
深圳市弘为电子有限公司	M5M5255DFP-70LL	MIT	24+	(SOP)	2650	原装现货假一罚十	询价
深圳市佳鑫美电子科技有限公司	M5M5V408BTP70H	MITSUMI	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市鹏和科技有限公司	M5M5V216ATP-70HIBT0X	RENESAS	24+	TSOP	5000	全现原装公司现货	询价
深圳市英科美电子有限公司	M5M5V108DKV-70H	RENESAS/瑞萨	2223+	TSSOP32	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市欧立现代科技有限公司	M5M5V416BUG-70HI	MIT	24+	BGA	6980	原装现货,可开13%税票	询价
深圳市和悦电子贸易有限公司	M5M5W816TP-55HI	RENESAS		TSOP-44	50000		询价
深圳市正迈科技有限公司	M5M51008DKV-70HF#BT	RENESAS	23+	NA	19854	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市乐峰达科技有限公司	M5M5165P-10L	MIT	25+	DIP	16850	全新原装正品、可开增票、可溯源、一站式配单	询价
深圳市振宏微科技有限公司	M5M51008CFP-70H	MITSUBISH	23+	BGAQFP	8659	原装公司现货!原装正品价格优势.	询价

更多M5M5供应商更新时间2026-1-30 8:02:00

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