1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

文件：120.04 Kbytes 页数：9 Pages

RENESAS

瑞萨

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

文件：70.54 Kbytes 页数：8 Pages

MITSUBISHI

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

文件：70.54 Kbytes 页数：8 Pages

MITSUBISHI

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

文件：120.04 Kbytes 页数：9 Pages

RENESAS

瑞萨

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

文件：120.04 Kbytes 页数：9 Pages

RENESAS

瑞萨

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densi

文件：70.54 Kbytes 页数：8 Pages

MITSUBISHI

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION\nThe M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS\ntechnology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densit Directly TTL compatible : All inputs and outputs\nEasy memory expansion and power down by S1,S2\nData hold on +2V power supply\nThree-state outputs : OR - tie capability\nOE prevents data contention in the I/O bus\nCommon data I/O\nPackage\n    M5M51008DFP  ············ 32pin  525mil  SOP\n    M5M51;

Renesas

瑞萨

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION\nThe M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS\ntechnology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high densit Directly TTL compatible : All inputs and outputs\nEasy memory expansion and power down by S1,S2\nData hold on +2V power supply\nThree-state outputs : OR - tie capability\nOE prevents data contention in the I/O bus\nCommon data I/O\nPackage\n   M5M51008DFP  ············ 32pin  525mil  SOP\n   M5M5100;

MITSUBISHI

三菱电机