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M5M51008DKV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DKV-55H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008DKV-55H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DKV-70H	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008DKV-70H	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008BFP	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CFP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CKV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CRV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CVP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008DFP	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008DFP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DKR	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DRV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DVP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司

详细参数

型号：
M5M51008DKV
制造商：
RENESAS
制造商全称：
Renesas Technology Corp
功能描述：
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	M5M51008DKV	MITSUBISHI	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市佳鑫美电子科技有限公司	M5M51008DKV-70HI	MITSUBISHI	22+	TSSOP-32	4650		询价
深圳好佳好科技有限公司	M5M51008DKV-70H	RENESAS	1430+	TSOP	9000	绝对原装进口现货可开增值税发票	询价
深圳市益百分电子有限公司	M5M51008DKV-55HI	MIT	TSOP32	0514+	223	全新原装进口自己库存优势	询价
深圳市毅创腾电子科技有限公司	M5M51008DKV-70HI	MIT	23+	TSSOP/32	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市科恒伟业电子有限公司	M5M51008DKV-70HI	MIT	2016+	TSSOP/32	6528	只做原厂原装现货!终端客户个别型号可以免费送样品!	询价
深圳市卓越微芯电子有限公司	M5M51008DKV-70HI	MIT	2020+	TSOP	37	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市莱克讯科技有限公司	M5M51008DKV-70HIST	RENESAS	2017+	TSSOP-32	32568	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市凯斯宇科技有限公司	M5M51008DKV-70HIST	RENESAS	2022	TSSOP	1300	原厂原装正品,价格超越代理	询价
深圳市弘为电子有限公司	M5M51008DKV-70H	MITSUBISHI	16+	TSOP	2598	原装现货假一罚十	询价

更多M5M51008DKV供应商更新时间2024-4-28 9:00:00

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