1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：79.48 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

MITSUBISHI

三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：79.48 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：85.25 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM. They are

文件：85.25 Kbytes 页数：7 Pages

Mitsubishi

三菱电机