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M5M51008CP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CP-55H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CP-55X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CP-70H	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CP-70X	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008BFP	文件：68.53 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CFP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CKV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CRV	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008CVP	文件：87.62 Kbytes Page：7 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008DFP	文件：70.54 Kbytes Page：8 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	MitsubishiMITSUBISHI electlic 三菱电机
M5M51008DFP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DKR	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DKV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DRV	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
M5M51008DVP	文件：120.04 Kbytes Page：9 Pages	1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司

详细参数

型号：
M5M51008CP
制造商：
MITSUBISHI
制造商全称：
Mitsubishi Electric Semiconductor
功能描述：
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	M5M51008CP	MITSUBISHI	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
深圳市特顺芯科技有限公司	M5M51008CP-70H	MIT	98+	SMD	3000	公司存货	询价
深圳市佳鑫美电子科技有限公司	M5M51008CP-70XI	MITSUBISHI	22+	DIP-32	4650		询价
深圳市莱克讯科技有限公司	M5M51008CP-70HA00A	MIT	2017+	DIP	25689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
鑫勃源（上海北京青岛）有限公司	M5M51008CP-70L	MIT	23+	SOP14	18000		询价
深圳市益百分电子有限公司	M5M51008CP-70H	MIT	00+	DIP32	1785	全新原装进口自己库存优势	询价
深圳市卓越微芯电子有限公司	M5M51008CP-70LL	MIT	2020+	DIP-32	21	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市科恒伟业电子有限公司	M5M51008CP-70H	MITSUBI	2016+	DIP32	6528	只做进口原装现货!假一赔十!	询价
深圳市毅创腾电子科技有限公司	M5M51008CP-70H	MIT	23+	DIP/32	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
齐创科技(上海,北京,青岛)有限公司	M5M51008CP-70H	MIT	23+	DIP32	13762	原装正品,假一罚十	询价

更多M5M51008CP供应商更新时间2024-4-25 9:01:00

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