1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件：87.62 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件：87.62 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件：87.62 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件：87.62 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high de

文件：87.62 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

FEATURES\n• Low stand-by current 0.1µA (typ.)\n• Directly TTL compatible : All inputs and outputs\n• Easy memory expansion and power down by S1,S2\n• Data hold on +2V power supply\n• Three-state outputs : OR - tie capability\n• OE prevents data contention in the I/O bus\n• Common data I/O\n• Package • Low stand-by current 0.1µA (typ.)\n• Directly TTL compatible : All inputs and outputs\n• Easy memory expansion and power down by S1,S2\n• Data hold on +2V power supply\n• Three-state outputs : OR - tie capability\n• OE prevents data contention in the I/O bus\n• Common data I/O\n• Package\n   M5M51;

MITSUBISHI

三菱电机

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION\nThe M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high dens • Low stand-by current 0.1µA (typ.)\n• Directly TTL compatible : All inputs and outputs\n• Easy memory expansion and power down by S1,S2\n• Data hold on +2V power supply\n• Three-state outputs : OR - tie capability\n• OE prevents data contention in the I/O bus\n• Common data I/O\n• Package\n   M5M51;

MITSUBISHI

三菱电机