isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 270mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：312.05 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

PolarHV™ Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features • Fast Recovery diode • Unclamped Inductive Switching (UIS) rated • International standard packages • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savi

文件：248.46 Kbytes 页数：5 Pages

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艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 250mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.3 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS

HiPerFET™ Power MOSFETs ISOPLUS247™ Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2

文件：37.76 Kbytes 页数：2 Pages

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艾赛斯

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated •

文件：70.95 Kbytes 页数：2 Pages

IXYS

艾赛斯