首页 >IRLL2703NTRPBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
POWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
POWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Logic-LevelGateDrive | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Logic-LevelGateDrive Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownf | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive | IRF International Rectifier | IRF | ||
POWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Logic-LevelGateDrive Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownf | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownf | IRF International Rectifier | IRF | ||
EarthLeakageDetector | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SPECIFICATIONSFORSAWDUPLEXER(RFDUPLEXERFORCORDLESSPHONEISM) RFDuplexerforCordlessphoneISM | KECKEC CORPORATION KEC株式会社 | KEC | ||
N-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •AEC-Q101Qualifiedc •100RgandUISTested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
MicropowerStep-upDC/DCConverterwith350mAPeakCurrentLimit | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
MicropowerStep-upDC/DCConverterwith350mAPeakCurrentLimit | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
LM2703MicropowerStep-UpDC/DCConverterwith350mAPeakCurrentLimit | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
SOT-223 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
SOT-223 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
SOT-223 |
7000 |
询价 | |||
IR |
23+ |
SOT-223 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
17+ |
SOT-223 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ir |
23+ |
NA |
1246 |
专做原装正品,假一罚百! |
询价 | ||
IR |
24+ |
SOT-223 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 |
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