256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word.

文件：153.38 Kbytes 页数：19 Pages

ISSI

矽成半导体

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n

文件：215.66 Kbytes 页数：20 Pages

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION The ICSI IS41C16256 and IS41LV16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. The IS41C16256 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10 n

文件：215.66 Kbytes 页数：20 Pages

ICSI

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSI

矽成半导体