INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：267.29 Kbytes 页数：6 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：267.29 Kbytes 页数：6 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s

文件：431.64 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：255.49 Kbytes 页数：6 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23A)

Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short

文件：1.35285 Mbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=33A)

Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of

文件：96.84 Kbytes 页数：2 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 页数：35 Pages

IRF