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IRGSL4B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerfor

IRF

International Rectifier

IRGSL4B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRF

International Rectifier

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRF

International Rectifier

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KD1PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerform

IRF

International Rectifier

IRGSL4B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerfor

IRF

International Rectifier

IRGSL4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH

IRF

International Rectifier

IRGSL4B60KD1PBF

Package:TO-262-3,长引线,I²Pak,TO-262AA;包装:卷带(TR) 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT NPT 600V 11A TO262

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRGB4B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRF

International Rectifier

IRGB4B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerfor

IRF

International Rectifier

详细参数

  • 型号:

    IRGSL4B60K

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR

供应商型号品牌批号封装库存备注价格
IR
2016+
TO-262
6528
房间原装进口现货假一赔十
询价
IR
24+
TO-262
5000
只做原装公司现货
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
23+
TO-262
50000
全新原装正品现货,支持订货
询价
IR
22+
TO-262
8900
英瑞芯只做原装正品!!!
询价
IR
03+
TO-262
470
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IR
22+
TO-262
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-262
2970
原厂原装正品
询价
IR
23+
TO-262
7300
专注配单,只做原装进口现货
询价
IR
23+
TO-262
7000
询价
更多IRGSL4B60K供应商 更新时间2025-5-20 19:28:00