INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE (on) Temperature Coefficient • Maximum Junction Temperature rated at 175°C • Lead-Free Benefits • Benchmark Efficiency for Motor Control • Rugged Transient Performance

文件：385.77 Kbytes 页数：14 Pages

IRF

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 78A 370W TO262

Infineon

英飞凌

Power Schottky Rectifier - 30Amp 60Volt

文件：133.17 Kbytes 页数：3 Pages

SIRECT

矽莱克半导体

Power Schottky Rectifier - 30Amp 60Volt

文件：133.17 Kbytes 页数：3 Pages

SIRECT

矽莱克半导体

TRANSISTOR MODULE

TRANSISTOR MODULE QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. ● IC 30A, VCEX 400/600V ● Low saturation voltage for higher efficiency. ● Is

文件：508.34 Kbytes 页数：2 Pages

SANREX

三社