INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

文件：190.21 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)

Features • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies (

文件：120.87 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package Benefits • Generation 4 IGBTs offer hig

文件：134.98 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package Benefits • Generation 4 IGBTs offer hig

文件：134.98 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)

Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations

文件：190.21 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

文件：326.33 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

文件：326.33 Kbytes 页数：12 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)

Features • Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies (

文件：120.87 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

Features • Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-

文件：189.76 Kbytes 页数：10 Pages

IRF