INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-

文件：353.86 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

Features • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package Benefits • Generation

文件：131.31 Kbytes 页数：8 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM u

文件：191.19 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode) • Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery

文件：308.4 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode) • Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package • Lead-Free Benefits

文件：654.18 Kbytes 页数：10 Pages

IRF

Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation

Features • UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode) • Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation • Industry standard TO-252AA package • Lead-Free Benefits

文件：654.18 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

文件：188.38 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：353.86 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：353.86 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：308.4 Kbytes 页数：11 Pages

IRF