INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)

UltraFast CoPack IGBT Features • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM u

文件：191.19 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • UltraFast: Optimized for high operating frequencies (8-40 kHz in hard swiching, > 200 kHz in resonant mode) • Generation 4 IGBT design provides tigher parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery

文件：308.4 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：308.4 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：308.4 Kbytes 页数：11 Pages

IRF

600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package

Infineon

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 8.5A 38W DPAK

INFINEON

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 8.5A 38W DPAK

INFINEON

英飞凌

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 8.5A 38W DPAK

INFINEON

英飞凌