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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
IRFG9110	文件：221.5 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFL9110	文件：171.51 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-1.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolder	IRF International Rectifier	IRF
IRFL9110	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9110	文件：360.03 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9110	文件：357.61 Kbytes Page：9 Pages	PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9110PBF	文件：223.19 Kbytes Page：9 Pages	HEXFET짰PowerMOSFET(VDSS=-100V,RDS(on)=1.2廓,ID=-1.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesold	IRF International Rectifier	IRF
IRFL9110PBF	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9110TR	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9110TRPBF	文件：1.3922 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechni	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9110TRPBF	文件：1.04318 Mbytes Page：8 Pages	P-Channel100-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

详细参数

型号：
IRFC9110R
功能描述：
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | CHIP

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRFC9110R	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IRFC9110R	IR	23+		8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFC9110R	IR	23+		7000		询价
深圳市振宏微科技有限公司	IRFC9130	IR	23+	SMD	9888	专做原装正品,假一罚百!	询价
深圳市威雅利发展有限公司	IRFC9140	IR	1244+	裸片	1066	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛尔通科技有限公司	IRFCM2400		23+		65480		询价

更多IRFC9110R供应商更新时间2025-5-23 14:00:00

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