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IRFL9110

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techni

文件:1.3922 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFL9110

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power

文件:357.61 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFL9110

Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-1.1A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave solder

文件:171.51 Kbytes 页数:6 Pages

IRF

IRFL9110

Power MOSFET

文件:360.03 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFL9110

HEXFET® Power MOSFET (VDSS = -100V, RDS(on) = 1.2 Ω, ID = -1.1A)

Infineon

英飞凌

IRFL9110_V01

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power

文件:357.61 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世科技

IRFL9110PBF

HEXFET짰 Power MOSFET ( VDSS = -100V , RDS(on) = 1.2廓 , ID = -1.1A )

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave sold

文件:223.19 Kbytes 页数:9 Pages

IRF

IRFL9110PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techni

文件:1.3922 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFL9110TR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techni

文件:1.3922 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRFL9110TRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techni

文件:1.3922 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    IRFL9110

  • 功能描述:

    MOSFET P-Chan 100V 1.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY/威世
25+
SOT-223
20300
VISHAY/威世原装特价IRFL9110即刻询购立享优惠#长期有货
询价
IR
23+
SOT-223
4500
原厂原装正品
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
2450+
SOT-223
9850
只做原装正品现货或订货假一赔十!
询价
IR
25+
SOT-223
3500
福安瓯为您提供真芯库存,真诚服务
询价
IR
24+
SOT-223
8700
新进库存/原装
询价
IR
25+
PLCC44
18000
原厂直接发货进口原装
询价
IOR
05/06+
SOT223
174
全新原装100真实现货供应
询价
IR
17+
TO-223
6200
100%原装正品现货
询价
IR
24+
SOT223
189
原装现货假一罚十
询价
更多IRFL9110供应商 更新时间2025-10-5 14:14:00