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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFBC40L	文件：984.33 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi 文件：984.33 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFBC40L	文件：350.66 Kbytes Page：10 Pages	Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. 文件：350.66 Kbytes 页数：10 Pages	IRF	IRF
IRFBC40L	文件：366.87 Kbytes Page：2 Pages	丝印：I2PAK；Package：TO-262；iscN-Channel MOSFET Transistor 文件：366.87 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFBC40L	文件：328.07 Kbytes Page：11 Pages	Power MOSFET 文件：328.07 Kbytes 页数：11 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFBC40LC	文件：148.34 Kbytes Page：8 Pages	Power MOSFET Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements 文件：148.34 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFBC40LC	文件：176.22 Kbytes Page：8 Pages	HEXFET-R POWER MOSFET HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A) 文件：176.22 Kbytes 页数：8 Pages	IRF	IRF
IRFBC40LCPBF	文件：148.34 Kbytes Page：8 Pages	Power MOSFET Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements 文件：148.34 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFBC40LPBF	文件：984.33 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provi 文件：984.33 Kbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFBC40LPBF	文件：360.09 Kbytes Page：10 Pages	HEXFET짰 Power MOSFET Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. 文件：360.09 Kbytes 页数：10 Pages	IRF	IRF
IRFBC40LC	文件：285.8 Kbytes Page：9 Pages	Power MOSFET 文件：285.8 Kbytes 页数：9 Pages	VishayVishay Siliconix 威世科技	Vishay

详细参数

型号：
IRFBC40L
功能描述：
MOSFET N-Chan 600V 6.2 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市汇莱威科技有限公司	IRFBC40L	IR	24+	TO-262	501154	免费送样原盒原包现货一手渠道联系	询价
深圳市一线半导体有限公司	IRFBC40L	IR	24+	TO-262	710		询价
深圳市勤思达科技有限公司	IRFBC40L	IR	2015+	TO-262	12500	全新原装,现货库存长期供应	询价
深圳市弘为电子有限公司	IRFBC40L	IR	24+	原厂封装	404	原装现货假一罚十	询价
瀚佳科技(深圳)有限公司	IRFBC40L	IR/VISH	24+		65230		询价
深圳市科雨电子有限公司	IRFBC40L	VISHAY	25+	TO-262	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市威尔健半导体有限公司	IRFBC40L	IR	23+	TO220	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IRFBC40L	IR	21+	TO-220	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IRFBC40L	Vishay Siliconix	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
易创佳业科技（深圳）有限公司	IRFBC40L	Vishay Siliconix	23+	TO2623 Long Leads I2Pak TO262A	9000	原装正品，支持实单	询价

更多IRFBC40L供应商更新时间2025-10-5 17:06:00

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