IRFBC40LC中文资料威世科技数据手册PDF规格书
IRFBC40LC规格书详情
Power MOSFET
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.
These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
产品属性
- 型号：
IRFBC40LC
- 功能描述：
MOSFET N-Chan 600V 6.2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
19 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
VISHAY(威世) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
IR |
24+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
24+ |
TO 220 |
161111 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
00+ |
TO-220 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
询价 | ||
IR |
24+/25+ |
6200 |
原装正品现货库存价优 |
询价 | |||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
IR |
1950+ |
TO220 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 |
