DIGITAL AUDIO MOSFET

Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are opti

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IRF

DIGITAL AUDIO MOSFET

Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are opti

文件：241.65 Kbytes 页数：7 Pages

IRF

丝印：FB4110；Package：TO-220；100 V N-Channel MOSFET

Benefits * Improved Gate, Avalanche and Dynamic dv/dt Ruggedness * Fully Characterized Capacitance and Avalanche SOA * Enhanced body diode dV/dt and dI/dt Capability * Lead Free * RoHS Compliant, Halogen-Free * VDS (V) =100V * ID = 120 A (VGS = 10V) * R DS(ON)

文件：843.85 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：FB4110；Package：TO-220；100 V N-Channel MOSFET

Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced bod

文件：815.41 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free Halogen-Free Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supp

文件：308.74 Kbytes 页数：8 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Sw

文件：710.29 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability 175°C Operating Temperature Automotive [Q101] Qualified Applications High Efficiency Synchronous Rectification in S

文件：306.08 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High S

文件：314.6 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：193 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：268.02 Kbytes 页数：12 Pages

IRF