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IRF7103IPBF

HEXFET Power MOSFET

文件:263.4 Kbytes 页数:9 Pages

IRF

IRF7103IPBF

HEXFET Power MOSFET

Infineon

英飞凌

NDL7103

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件:63.48 Kbytes 页数:8 Pages

NEC

瑞萨

NDL7103

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件:61.3 Kbytes 页数:8 Pages

NEC

瑞萨

NDL7103

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件:60.61 Kbytes 页数:8 Pages

NEC

瑞萨

详细参数

  • 型号:

    IRF7103IPBF

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ir
25+
500000
行业低价,代理渠道
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IR
22+
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8000
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22+
so-8
6000
终端可免费供样,支持BOM配单
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IR
23+
8000
只做原装现货
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IR
23+
7000
询价
IR
08+
SOP8
3300
全新原装绝对自己公司现货特价!
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IR
17+
SOP8
6200
100%原装正品现货
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IR
23+
SO-8
8650
受权代理!全新原装现货特价热卖!
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IR
20+
SO-8
63258
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IR
1923+
SOP8
5000
正品原装品质假一赔十
询价
更多IRF7103IPBF供应商 更新时间2026-4-2 15:52:00