IRF7210资料datasheet下载原装现货英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF7210	文件：145.31 Kbytes Page：7 Pages	HEXFET Power MOSFET Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 文件：145.31 Kbytes 页数：7 Pages	IRF	IRF
IRF7210	文件：300 bytes Page：1 Pages	HEXFET Power MOSFET	Infineon 英飞凌	Infineon
IRF7210PBF	文件：547.68 Kbytes Page：7 Pages	HEXFET Power MOSFET Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 文件：547.68 Kbytes 页数：7 Pages	IRF	IRF
IRF7210PBF	文件：553.16 Kbytes Page：7 Pages	Ultra Low On-Resistance 文件：553.16 Kbytes 页数：7 Pages	IRF	IRF
IRF7210TRPBF	文件：553.16 Kbytes Page：7 Pages	Ultra Low On-Resistance 文件：553.16 Kbytes 页数：7 Pages	IRF	IRF
IRF7210TRPBF	文件：1.5226 Mbytes Page：6 Pages	P-Channel 12-V (D-S) MOSFET 文件：1.5226 Mbytes 页数：6 Pages	VBSEMI 微碧半导体	VBSEMI

更多IRF7210供应商更新时间2025-10-4 9:00:00