Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.19559 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：115.39 Kbytes 页数：9 Pages

IRF

Dual P-Channel MOSFET

Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Features
VDS (V) = -20V
RDS(ON) 140 m (VGS =-2.7V)
RDS(ON) 90m (VGS =-4.5V) The SOP-8 has been modified through a customized leadframe for enhan

文件：427.86 Kbytes 页数：8 Pages

UMW

友台半导体

Dual P-Channel MOSFET

Features Generation V Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free VDS (V) = -20V RDS(ON)

文件：394.76 Kbytes 页数：8 Pages

EVVOSEMI

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