丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

UMW

友台半导体

MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

文件：450.97 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：194.12 Kbytes 页数：10 Pages

IRF

丝印：IRF7307；Package：SOP-8；MOSFET

Features N-Ch： VDS (V) = 20V RDS(ON)

文件：450.97 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：IRF7307；Package：SOP-8；Generation V Technology Ultra

Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Dynamic dv/dt Rating Fast Switching Lead-Free 100 Features VDS (V) = 20V RDS(ON) 53m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.7V) VDS (V) = -20V RDS(ON) m (VGS = -4.5V)
RDS(ON) 140m (VGS = -2.7V) N-

文件：491.51 Kbytes 页数：9 Pages

UMW

友台半导体

20V 单个 N 通道和 P 通道 HEXFET Power MOSFET， 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道和 P 通道 MOSFET;

Infineon

英飞凌

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：282.08 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C j

文件：302.55 Kbytes 页数：10 Pages

IRF

丝印：F7101；Package：SO-8；Dual N and P Channel Mospet

文件：287.73 Kbytes 页数：10 Pages

Infineon

英飞凌

GENERATION V TECHNOLOGY

文件：287.73 Kbytes 页数：10 Pages

IRF