HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：147.52 Kbytes 页数：7 Pages

IRF

采用 SO-8 封装的 IR MOSFET -20 V

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 P 通道 MOSFET;

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°

文件：149.71 Kbytes 页数：9 Pages

IRF

GENERATION V TECHNOLOGY

文件：201.49 Kbytes 页数：7 Pages

IRF

Generation V Technology, Ultra Low On-Resistance

文件：201.49 Kbytes 页数：7 Pages

IRF

Generation V Technology

文件：201.49 Kbytes 页数：7 Pages

IRF

GENERATION V TECHNOLOGY

文件：201.49 Kbytes 页数：7 Pages

IRF

Advanced Process Technology

文件：223.02 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：201.49 Kbytes 页数：7 Pages

IRF

Dual P-Channel 30-V (D-S) MOSFET

文件：1.10117 Mbytes 页数：9 Pages

VBSEMI

微碧半导体