HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：113.68 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：116.2 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：116.2 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 P 通道 MOSFET;

Infineon

英飞凌

HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：231.71 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C j

文件：249.48 Kbytes 页数：9 Pages

IRF

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.19365 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.19358 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

GENERATION V TECHNOLOGY

文件：237.27 Kbytes 页数：9 Pages

IRF

GENERATION V TECHNOLOGY

文件：237.27 Kbytes 页数：9 Pages

IRF