N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TRANSISTORS N-CHANNEL

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET® technology is the key to International Rectifiers advanced line of power MOSFET transistor. FEATURES: ■ Repetitive Avalanche Ratings ■ Dynamic dv/dt Ratings ■ Simple Drive Requirement ■ Ease of Paralleling

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IRF

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-channel enhancement mode power mos transistors

文件：343.23 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-Channel Power MOSFETs

文件：333.66 Kbytes 页数：6 Pages

ARTSCHIP

isc N-Channel MOSFET Transistor

文件：45.31 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTORS N-CHANNEL

Infineon

英飞凌

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：416.88 Kbytes 页数：24 Pages

AD

亚德诺

Thermoelectric Cooler Controller

GENERAL DESCRIPTION The ADN8830 is a monolithic controller that drives a thermoelectric cooler (TEC) to stabilize the temperature of a laser diode or a passive component used in telecommunications equipment. This device relies on a negative temperature coefficient (NTC) thermistor to sense t

文件：279.17 Kbytes 页数：22 Pages

AD

亚德诺

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has

文件：162.08 Kbytes 页数：7 Pages

IRF