HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The

文件：229.41 Kbytes 页数：9 Pages

IRF

P-Channel MOSFET

Features VDS (V) = -40V ID = -10.5 A RDS(ON)

文件：318.67 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：IRF7240；Package：SOP-8；P-Channel MOSFET

Features VDS (V) = -40V ID = -10.5 A RDS(ON)

文件：318.67 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：IRF7240；Package：SOP-8；P-Channel MOSFET

Features Ultra Low On-Resistance Surface Mount Lead-Free VDS (V) = -40V ID = -10.5 A RDS(ON) 16m (VGS = -10V) RDS(ON) 27m (VGS = -4.5V)

文件：348.8 Kbytes 页数：9 Pages

UMW

友台半导体

采用 SO-8 封装的 IR MOSFET -40 V

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 符合行业标准的引脚\n• P 通道MOSFET;

Infineon

英飞凌

HEXFET Power MOSFET

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The

文件：121.33 Kbytes 页数：9 Pages

IRF

丝印：P16TY；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Application ● High power and current handing capability ● Lead free product is acquired ● Surface mount package

文件：3.53755 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Ultra Low On-Resistance

文件：126.72 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：126.72 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：126.72 Kbytes 页数：9 Pages

IRF