丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

文件：162.21 Kbytes 页数：8 Pages

IRF

GENERATION V TECHNOLOGY

文件：2.10532 Mbytes 页数：11 Pages

IRF

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: VDS (V) = 30V RDS(ON)

文件：2.3004 Mbytes 页数：11 Pages

EVVOSEMI

翊欧

丝印：IRF7309；Package：SOP-8；Dual N P Channel MOSFET

Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
VDS (V) = 30V
RDS(ON) 70m (VGS = 2.7V)
RDS(ON) 50m (VGS = 4.5V)
VDS (V) = -30V
RDS(ON) 100m (VGS = 4.5V)
RDS(ON) 140m (VGS = 2.7V) Features

N-Ch: P-Ch:

文件：2.30446 Mbytes 页数：11 Pages

UMW

友台半导体

采用 SO-8 封装的 30V 双 N 通道和 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 动态的dv/dt额定值\n• 快速开关\n• 双 N 通道和 P 通道 MOSFET;

Infineon

英飞凌

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known

文件：2.09404 Mbytes 页数：11 Pages

IRF

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.44944 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

HEXFET Power MOSFET

文件：1.80378 Mbytes 页数：11 Pages

IRF